All MOSFET. IXFK24N100F Datasheet

 

IXFK24N100F Datasheet and Replacement


   Type Designator: IXFK24N100F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO264
 

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IXFK24N100F Datasheet (PDF)

 4.1. Size:124K  ixys
 ixfk24n100q3 ixfx24n100q3.pdf pdf_icon

IXFK24N100F

Advance Technical InformationHiperFETTM VDSS = 1000VIXFK24N100Q3Power MOSFETs ID25 = 24AIXFX24N100Q3 Q3-Class RDS(on) 440m trr 300nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic Rectifier TO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1000 V DSVDGR TJ = 25C to 150

 4.2. Size:133K  ixys
 ixfk24n100 ixfx24n100.pdf pdf_icon

IXFK24N100F

VDSS = 1000VHiPerFETTM PowerIXFK24N100ID25 = 24AMOSFETsIXFX24N100 RDS(on) 390m t 250nsrrN-Channel Enhancement ModeAvalanche RatedFast Intrisic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VG (T

 7.1. Size:158K  ixys
 ixfh24n80p ixfk24n80p ixft24n80p.pdf pdf_icon

IXFK24N100F

IXFH 24N80P VDSS = 800 VPolarHVTM HiPerFETIXFK 24N80P ID25 = 24 APower MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGSS Con

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Keywords - IXFK24N100F MOSFET datasheet

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