All MOSFET. IXFK360N10T Datasheet

 

IXFK360N10T Datasheet and Replacement


   Type Designator: IXFK360N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 525 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO264
 

 IXFK360N10T substitution

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IXFK360N10T Datasheet (PDF)

 8.1. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFK360N10T

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 8.2. Size:268K  ixys
ixfh36n60p ixft36n60p ixfk36n60p.pdf pdf_icon

IXFK360N10T

IXFH 36N60P VDSS = 600 VPolarHVTM HiPerFETIXFK 36N60P ID25 = 36 APower MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

 9.1. Size:38K  ixys
ixfk33n50 ixfk35n50.pdf pdf_icon

IXFK360N10T

VDSS ID25 RDS(on)HiPerFETTMIXFK33N50 500 V 33 A 0.16 WPower MOSFETsIXFK35N50 500 V 35 A 0.15 WN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrPreliminary dataTO-264 AASymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VGVGS Continuous 20 V D (TAB)DSVGSM Transient 30 VID

 9.2. Size:161K  ixys
ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFK360N10T

IXFK 32N80P VDSS = 800 VPolarHVTM HiPerFETIXFX 32N80P ID25 = 32 APower MOSFET RDS(on) 270 m N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RGS = 1 M 800 VVGSS Contin

Datasheet: IXFK27N80Q , IXFK30N100Q2 , IXFK30N110P , IXFK320N17T2 , IXFK32N100P , IXFK32N100Q3 , IXFK32N80P , IXFK32N80Q3 , IRF3205 , IXFK360N15T2 , IXFK36N60P , IXFK38N80Q2 , IXFK40N50Q2 , IXFK40N90P , IXFK420N10T , IXFK44N50F , IXFK44N50P .

Keywords - IXFK360N10T MOSFET datasheet

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