IXFK360N15T2 PDF and Equivalents Search

 

IXFK360N15T2 Specs and Replacement

Type Designator: IXFK360N15T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1670 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 360 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO264

IXFK360N15T2 substitution

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IXFK360N15T2 datasheet

 8.1. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFK360N15T2

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒

 8.2. Size:268K  ixys
ixfh36n60p ixft36n60p ixfk36n60p.pdf pdf_icon

IXFK360N15T2

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V ... See More ⇒

 9.1. Size:38K  ixys
ixfk33n50 ixfk35n50.pdf pdf_icon

IXFK360N15T2

VDSS ID25 RDS(on) HiPerFETTM IXFK33N50 500 V 33 A 0.16 W Power MOSFETs IXFK35N50 500 V 35 A 0.15 W N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Preliminary data TO-264 AA Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V G VGS Continuous 20 V D (TAB) D S VGSM Transient 30 V ID... See More ⇒

 9.2. Size:161K  ixys
ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFK360N15T2

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin... See More ⇒

Detailed specifications: IXFK30N100Q2, IXFK30N110P, IXFK320N17T2, IXFK32N100P, IXFK32N100Q3, IXFK32N80P, IXFK32N80Q3, IXFK360N10T, IRF740, IXFK36N60P, IXFK38N80Q2, IXFK40N50Q2, IXFK40N90P, IXFK420N10T, IXFK44N50F, IXFK44N50P, IXFK44N50Q

Keywords - IXFK360N15T2 MOSFET specs

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