All MOSFET. IXFK38N80Q2 Datasheet

 

IXFK38N80Q2 Datasheet and Replacement


   Type Designator: IXFK38N80Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 735 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 190 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO264
 

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IXFK38N80Q2 Datasheet (PDF)

 9.1. Size:38K  ixys
ixfk33n50 ixfk35n50.pdf pdf_icon

IXFK38N80Q2

VDSS ID25 RDS(on)HiPerFETTMIXFK33N50 500 V 33 A 0.16 WPower MOSFETsIXFK35N50 500 V 35 A 0.15 WN-Channel Enhancement Modetrr 250 nsAvalanche Rated, High dv/dt, Low trrPreliminary dataTO-264 AASymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VGVGS Continuous 20 V D (TAB)DSVGSM Transient 30 VID

 9.2. Size:161K  ixys
ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFK38N80Q2

IXFK 32N80P VDSS = 800 VPolarHVTM HiPerFETIXFX 32N80P ID25 = 32 APower MOSFET RDS(on) 270 m N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RGS = 1 M 800 VVGSS Contin

 9.3. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFK38N80Q2

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 9.4. Size:123K  ixys
ixfk30n50q ixfx30n50q.pdf pdf_icon

IXFK38N80Q2

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 30N50Q500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - IXFK38N80Q2 MOSFET datasheet

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