All MOSFET. IXFK48N55 Datasheet

 

IXFK48N55 Datasheet and Replacement


   Type Designator: IXFK48N55
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 330 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO264
 

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IXFK48N55 Datasheet (PDF)

 6.1. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf pdf_icon

IXFK48N55

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 6.2. Size:108K  ixys
 ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf pdf_icon

IXFK48N55

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 6.3. Size:574K  ixys
 ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf pdf_icon

IXFK48N55

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 48N50Q 500 V 48 A 100 mPower MOSFETsIXFK/IXFX 44N50Q 500 V 44 A 120 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low QgPLUS 247TM (IXFX)High dV/dt, Low trrSymbol Test Conditions Maximum Ratings (TAB)GDVDSS TJ = 25C to 150

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Keywords - IXFK48N55 MOSFET datasheet

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