IXFK88N30P Datasheet and Replacement

PolarTM HiPerFETTM VDSS = 300VIXFT88N30PID25 = 88APower MOSFETIXFH88N30P RDS(on) 40m IXFK88N30Ptrr 200nsTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSTabSymbol Test Conditions Maximum RatingsTO-247(IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

PolarTM HiPerFETTM VDSS = 300VIXFT88N30PID25 = 88APower MOSFETIXFH88N30P RDS(on) 40m IXFK88N30Ptrr 200nsTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSTabSymbol Test Conditions Maximum RatingsTO-247(IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

VDSS ID25 RDS(on)HiPerFETTMIXFK72N20 200 V 72 A 35 mWPower MOSFETsIXFK80N20 200 V 80 A 30 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrPreliminary dataSymbol Test Conditions Maximum RatingsTO-264 AAVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 VGVGS Continuous 20 V(TAB)DSVGSM Transient 30 VID25

IXFH 80N20QHiPerFETTMVDSS = 200 VIXFK 80N20QPower MOSFETs ID25 = 80 AIXFT 80N20QQ-Class RDS(on) = 28 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V(TAB)VGS Continuous 20 VVGSM Transi

IXFK 80N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 80N50P ID25 = 80 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings TO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSM Transient

X2-Class HiPerFETTM VDSS = 650VIXFH80N65X2Power MOSFET ID25 = 80AIXFK80N65X2 RDS(on) 38m TO-247 (IXFH)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGDSD (Tab)TO-264P (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous