IXFK88N30P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFK88N30P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 200 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO264
IXFK88N30P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFK88N30P Datasheet (PDF)
ixft88n30p ixfh88n30p ixfk88n30p.pdf
PolarTM HiPerFETTM VDSS = 300VIXFT88N30PID25 = 88APower MOSFETIXFH88N30P RDS(on) 40m IXFK88N30Ptrr 200nsTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSTabSymbol Test Conditions Maximum RatingsTO-247(IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M
ixfh88n30p ixft88n30p ixfk88n30p.pdf
PolarTM HiPerFETTM VDSS = 300VIXFT88N30PID25 = 88APower MOSFETIXFH88N30P RDS(on) 40m IXFK88N30Ptrr 200nsTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSTabSymbol Test Conditions Maximum RatingsTO-247(IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M
ixfk72n20 ixfk80n20.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFK72N20 200 V 72 A 35 mWPower MOSFETsIXFK80N20 200 V 80 A 30 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrPreliminary dataSymbol Test Conditions Maximum RatingsTO-264 AAVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 VGVGS Continuous 20 V(TAB)DSVGSM Transient 30 VID25
ixfh80n20q ixfk80n20q ixft80n20q.pdf
IXFH 80N20QHiPerFETTMVDSS = 200 VIXFK 80N20QPower MOSFETs ID25 = 80 AIXFT 80N20QQ-Class RDS(on) = 28 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V(TAB)VGS Continuous 20 VVGSM Transi
ixfk80n50p ixfx80n50p.pdf
IXFK 80N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 80N50P ID25 = 80 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings TO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSM Transient
ixfh80n65x2 ixfk80n65x2.pdf
X2-Class HiPerFETTM VDSS = 650VIXFH80N65X2Power MOSFET ID25 = 80AIXFK80N65X2 RDS(on) 38m TO-247 (IXFH)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeGDSD (Tab)TO-264P (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
