All MOSFET. IXFK98N50P3 Datasheet

 

IXFK98N50P3 Datasheet and Replacement


   Type Designator: IXFK98N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 200 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO264
 

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IXFK98N50P3 Datasheet (PDF)

 9.1. Size:197K  ixys
 ixfk90n60x ixfx90n60x.pdf pdf_icon

IXFK98N50P3

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFK90N60XPower MOSFET ID25 = 90AIXFX90N60X RDS(on) 38m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDTabVDGR TJ = 25C to 150C, RGS = 1M 600 VSVGSS

 9.2. Size:135K  ixys
 ixfk94n50p2 ixfx94n50p2.pdf pdf_icon

IXFK98N50P3

Polar2TM HiPerFETTM VDSS = 500VIXFK94N50P2Power MOSFET ID25 = 94AIXFX94N50P2 RDS(on) 55m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 500 VTabVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VPLUS247 (IXFX)VGSM Tr

 9.3. Size:111K  ixys
 ixfk90n20 ixfn100n20 ixfn106n20.pdf pdf_icon

IXFK98N50P3

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t

 9.4. Size:125K  ixys
 ixfx90n30 ixfk90n30.pdf pdf_icon

IXFK98N50P3

IXFX 90N30 VDSS = 300 VHiPerFETTMIXFK 90N30 ID25 = 90 APower MOSFETsRDS(on) = 33 mSingle MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TMVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 V(TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capabi

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Keywords - IXFK98N50P3 MOSFET datasheet

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