All MOSFET. IXFN100N20 Datasheet

 

IXFN100N20 Datasheet and Replacement


   Type Designator: IXFN100N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 521 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT227B
 

 IXFN100N20 substitution

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IXFN100N20 Datasheet (PDF)

 ..1. Size:111K  ixys
ixfk90n20 ixfn100n20 ixfn106n20.pdf pdf_icon

IXFN100N20

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t

 5.1. Size:70K  ixys
ixfn100n25.pdf pdf_icon

IXFN100N20

Advanced Technical InformationHiPerFETTM IXFN 100N25 VDSS = 250 VID25 = 100 APower MOSFETsSingle MOSFET Die RDS(on) = 27 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 250 VSVDGR TJ = 25C to 150C; RGS = 1 MW 250 VGVGS Continuous 20 V

 6.1. Size:99K  ixys
ixfn100n10s1-s2-s3.pdf pdf_icon

IXFN100N20

HiPerFETTM Power MOSFETs IXFN 100N10S1VDSS = 100 VIXFN 100N10S2with Schottky DiodesID25 = 100 AIXFN 100N10S3RDS(on) = 15 mm~~I=_=C==_=`~=pjmpI=mc`=C=j=`=`S2QEaFQEaFS1 S3QEaFPEhFNEdFNEdFNEdFPE^FOEpFOEpFOIPEpFSymbol Test Conditions Maximum Rati

 6.2. Size:152K  ixys
ixfn100n50p.pdf pdf_icon

IXFN100N20

IXFN 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 90 APower MOSFET RDS(on) 49 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M 500

Datasheet: IXFL60N60 , IXFL60N80P , IXFL70N60Q2 , IXFL80N50Q2 , IXFL82N60P , IXFN100N10S1 , IXFN100N10S2 , IXFN100N10S3 , 10N65 , IXFN100N50P , IXFN100N50Q3 , IXFN102N30P , IXFN110N60P3 , IXFN132N50P3 , IXFN140N20P , IXFN140N25T , IXFN140N30P .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

Keywords - IXFN100N20 MOSFET datasheet

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