IXFN110N60P3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFN110N60P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 254 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOT227

IXFN110N60P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFN110N60P3 Datasheet (PDF)

6.1. Size:395K ixys
ixfk110n20 ixfk120n20 ixfn110n20 ixfn120n20.pdf

This datasheet has been downloaded from http://www.digchip.com at this page

9.1. Size:143K ixys
ixfn180n25t.pdf

Advance Technical InformationGigaMOSTM VDSS = 250VIXFN180N25TID25 = 155APower MOSFET RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

9.2. Size:118K ixys
ixfn170n30p.pdf

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 300VIXFN170N30PID25 = 138AHiPerFETTM RDS(on) 18m N-Channel Enhancement Modetrr 200nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 300 VSGVDGR TJ = 25C to 150C, R

9.3. Size:70K ixys
ixfn150n15.pdf

HiPerFETTM IXFN 150N15 VDSS = 150 VID25 = 150 APower MOSFETRDS(on) = 12.5 mWSingle MOSFET Dietrr 250 nsPreliminary data sheetminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 150 VSVDGR TJ = 25C to 150C, RGS = 1MW 150 VGVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 150 ASIL(RMS) Terminal (curre

9.4. Size:99K ixys
ixfn100n10s1-s2-s3.pdf

HiPerFETTM Power MOSFETs IXFN 100N10S1VDSS = 100 VIXFN 100N10S2with Schottky DiodesID25 = 100 AIXFN 100N10S3RDS(on) = 15 mm~~I=_=C==_=`~=pjmpI=mc`=C=j=`=`S2QEaFQEaFS1 S3QEaFPEhFNEdFNEdFNEdFPE^FOEpFOEpFOIPEpFSymbol Test Conditions Maximum Rati

9.5. Size:157K ixys
ixfn120n20.pdf

IXFN 120N20 VDSS = 200 VHiPerFETTMID25 = 120 APower MOSFETsRDS(on) = 17 mSingle MOSFET DieN-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 200 VSVDGR TJ = 25C to 150C; RGS = 1 M 200 VGVGS Co

9.6. Size:92K ixys
ixfn140n20p.pdf

VDSS = 200 VIXFN 140N20PPolarHTTM HiPerFETID25 = 115 APower MOSFET RDS(on) 18 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VminiBLOC, SOT-227 B (IXFN)VDGR TJ = 25C to 175C; RGS = 1 M 200 VE153432VGS Continuous 20 VS

9.7. Size:111K ixys
ixfk90n20 ixfn100n20 ixfn106n20.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFK 90 N 20 200 V 90 A 23 mWPower MOSFETsIXFN 100 N 20 200 V 100 A 23 mWIXFN 106 N 20 200 V 106 A 20 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)IXFK IXFN IXFN90N20 100N20 106N20VDSS TJ = 25C to 150C 200 200 200 VG (TAB)VDGR TJ = 25C t

9.8. Size:152K ixys
ixfn180n15p.pdf

VDSS = 150 VIXFN 180N15PPolarHTTM HiPerFETID25 = 150 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche Ratedtrr 200 nsFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 175 C 150 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 15

9.9. Size:117K ixys
ixfk100n10 ixfn150n10.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFK100N10 100 V 100 A 12 mWPower MOSFETsIXFN150N10 100 V 150 A 12 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 100 100 VG (TAB)VDGR TJ = 25C to 150C; RGS = 1 MW 100 100 V DSVGS Continuous 20 20 VminiBLOC, SOT

9.10. Size:70K ixys
ixfn100n25.pdf

Advanced Technical InformationHiPerFETTM IXFN 100N25 VDSS = 250 VID25 = 100 APower MOSFETsSingle MOSFET Die RDS(on) = 27 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 250 VSVDGR TJ = 25C to 150C; RGS = 1 MW 250 VGVGS Continuous 20 V

9.11. Size:144K ixys
ixfk170n10 ixfn170n10.pdf

VDSS ID25 RDS(on) trrHiPerFETTMIXFN170N10 100V 170A 10mW 200nsPower MOSFETIXFK170N10 100V 170A 10mW 200nsSingle MOSFET DieTO-264 AA (IXFK)Preliminary dataSymbol Test Conditions Maximum Ratings IXFK IXFN170N10 170N10GD (TAB)VDSS TJ = 25C to 150C 100 100 VDSVDGR TJ = 25C to 150C 100 100 VVGS Continuous 20 20 VVGSM Transient 30 30 VminiBLOC, SO

9.12. Size:84K ixys
ixfn180n10.pdf

IXFN 180N10 VDSS = 100 VHiPerFETTMID25 = 180 APower MOSFETRDS(on) = 8 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 100 VSVDGR TJ = 25C to 150C, RGS = 1M 100 VGVGS Continuous 20 VVGSM Transient 30 VSID

9.13. Size:155K ixys
ixfn130n30.pdf

HiPerFETTMIXFN 130N30 VDSS = 300 VPower MOSFETsID25 = 130 ASingle Die MOSFETRDS(on) = 22 mDtrr

9.14. Size:142K ixys
ixfn160n30t.pdf

Advance Technical InformationGigaMOSTM VDSS = 300VIXFN160N30TID25 = 130APower MOSFET RDS(on) 19m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M

9.15. Size:190K ixys
ixfn180n07 ixfn200n07 ixfn200n06.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06

9.16. Size:152K ixys
ixfn100n50p.pdf

IXFN 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 90 APower MOSFET RDS(on) 49 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M 500

9.17. Size:112K ixys
ixfk100n20 ixfn90n20 ixfn106n20.pdf