All MOSFET. IXFN180N15P Datasheet

 

IXFN180N15P Datasheet and Replacement


   Type Designator: IXFN180N15P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 680 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOT227B
 

 IXFN180N15P substitution

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IXFN180N15P Datasheet (PDF)

 ..1. Size:152K  ixys
 ixfn180n15p.pdf pdf_icon

IXFN180N15P

VDSS = 150 VIXFN 180N15PPolarHTTM HiPerFETID25 = 150 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche Ratedtrr 200 nsFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 175 C 150 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 15

 5.1. Size:84K  ixys
 ixfn180n10.pdf pdf_icon

IXFN180N15P

IXFN 180N10 VDSS = 100 VHiPerFETTMID25 = 180 APower MOSFETRDS(on) = 8 mSingle MOSFET Die trr 250 ns Preliminary data sheetSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 100 VSVDGR TJ = 25C to 150C, RGS = 1M 100 VGVGS Continuous 20 VVGSM Transient 30 VSID

 6.1. Size:143K  ixys
 ixfn180n25t.pdf pdf_icon

IXFN180N15P

Advance Technical InformationGigaMOSTM VDSS = 250VIXFN180N25TID25 = 155APower MOSFET RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

 6.2. Size:190K  ixys
 ixfn180n07 ixfn200n07 ixfn200n06.pdf pdf_icon

IXFN180N15P

VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06

SHOW MORE

Datasheet: IXFN102N30P , IXFN110N60P3 , IXFN132N50P3 , IXFN140N20P , IXFN140N25T , IXFN140N30P , IXFN160N30T , IXFN170N30P , CS150N03A8 , IXFN180N25T , IXFN200N10P , IXFN20N120 , IXFN20N120P , IXFN210N20P , IXFN21N100Q , IXFN22N120 , IXFN230N20T .

History: IPD038N06N3 | SWB640D

Keywords - IXFN180N15P MOSFET datasheet

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