IXFN21N100Q MOSFET Datasheet: N-Ch, 1000V, 21A. Full specification with pinout and replacement list

IXFN21N100Q Specs and Replacement

Type Designator: IXFN21N100Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 521 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT227B

IXFN21N100Q substitution

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