All MOSFET. IXFN21N100Q Datasheet

 

IXFN21N100Q MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFN21N100Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 521 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: SOT227B

IXFN21N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN21N100Q Datasheet (PDF)

5.1. ixfn280n07.pdf Size:113K _ixys

IXFN21N100Q
IXFN21N100Q

HiPerFETTM VDSS = 70V IXFN280N07 ID25 = 280A Power MOSFETs ≤ Ω RDS(on) ≤ Ω ≤ 5mΩ ≤ Ω ≤ Ω Single Die MOSFET ≤ trr ≤ ≤ 250ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 70 V VGSS

5.2. ixfn26n90 ixfn25n90.pdf Size:141K _ixys

IXFN21N100Q
IXFN21N100Q

VDSS ID (cont) RDS(on) trr HiPerFETTM Power MOSFETs 900 V 26 A 0.30 W 250 ns IXFN 26N90 Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 ns N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C 900 V S VDGR TJ = 25C to 150C; RGS = 1 MW 90

5.3. ixfn260n17t.pdf Size:124K _ixys

IXFN21N100Q
IXFN21N100Q

Advance Technical Information GigaMOSTM VDSS = 170V IXFN260N17T ID25 = 245A Power MOSFET ? ? RDS(on) ? 6.5m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 170 V VDGR TJ = 25C to 175C, RGS = 1M? 170 V S VGSS Continuous 20 V D V

5.4. ixfn24n100.pdf Size:108K _ixys

IXFN21N100Q
IXFN21N100Q

HiPerFETTM Power VDSS = 1000V IXFN24N100 MOSFET ID25 = 24A ? ? RDS(on) ? ? ? 390m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 250ns ? ? Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25C to 150C 1000 V S G VDGR TJ = 25C to 150C, RGS = 1M? 1000 V VGSS Continuous 20 V VGSM Transient 30 V S D ID25 T

5.5. ixfn200n06 ixfn200n07.pdf Size:94K _ixys

IXFN21N100Q
IXFN21N100Q

VDSS ID25 RDS(on) HiPerFETTM ? IXFN 200 N06 60 V 200 A 6 m? ? ? ? Power MOSFETs ? IXFN 200 N07 70 V 200 A 6 m? ? ? ? N-Channel Enhancement Mode ? trr ? ? 250 ns ? ? Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25C to 150C N07 70 V VDGR TJ = 25C to 150C; RGS = 1 M? N06 60 V S G VGS Continuous

5.6. ixfn180n07 ixfn200n07 ixfn200n06.pdf Size:190K _ixys

IXFN21N100Q
IXFN21N100Q

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 mW Power MOSFETs IXFN 180 N07 70 V 180 A 7 mW IXFN 200 N07 70 V 200 A 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C N07 70 V N06 60 V S VDGR TJ = 25°C to 150°C; RGS = 1 MW N07 70 V G N06

5.7. ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80.pdf Size:162K _ixys

IXFN21N100Q
IXFN21N100Q

Not for New Designs VDSS ID25 RDS(on) ? IXFK 27N80 800 V 27 A 0.30 ? ? ? HiPerFETTM Power MOSFETs ? ? IXFK 25N80 800 V 25 A 0.35 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ? IXFN 27N80 800 V 27 A 0.30 ? ? ? ? ? IXFN 25N80 800 V 25 A 0.35 ? ? ? ? TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 800 800

5.8. ixfn230n20t.pdf Size:143K _ixys

IXFN21N100Q
IXFN21N100Q

Advance Technical Information GigaMOSTM VDSS = 200V IXFN230N20T ID25 = 230A Power MOSFET ? ? RDS(on) ? 7.5m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M? 200 V VGSS Continuous 20 V S VGSM

5.9. ixfn200n10p.pdf Size:86K _ixys

IXFN21N100Q
IXFN21N100Q

VDSS = 100 V IXFN 200N10P PolarTM HiPerFET ID25 = 200 A Power MOSFET ? ? RDS(on) ? 7.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 150 ns ? ? ? Fast Intrinsic Diode Avalanche Rated miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25C to 175C 100 V G VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient

5.10. ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80.pdf Size:151K _ixys

IXFN21N100Q
IXFN21N100Q

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs N-Channel Enhancement Mode IXFK 27N80 800 V 27 A 0.30 W Avalanche Rated, High dv/dt, Low trr IXFK 25N80 800 V 25 A 0.35 W IXFN 27N80 800 V 27 A 0.30 W IXFN 25N80 800 V 25 A 0.35 W Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN VDSS TJ = 25°C to 150°C 800 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 800 V VGS Continuo

Datasheet: IXFN160N30T , IXFN170N30P , IXFN180N15P , IXFN180N25T , IXFN200N10P , IXFN20N120 , IXFN20N120P , IXFN210N20P , IRLR2905 , IXFN22N120 , IXFN230N20T , IXFN23N100 , IXFN240N15T2 , IXFN24N100F , IXFN26N100P , IXFN26N120P , IXFN27N80Q .

 


IXFN21N100Q
  IXFN21N100Q
  IXFN21N100Q
 

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