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IXFN32N100Q3 Spec and Replacement


   Type Designator: IXFN32N100Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 780 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: SOT227

 IXFN32N100Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN32N100Q3 Specs

 7.1. Size:192K  ixys
 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFN32N100Q3

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1... See More ⇒

 9.1. Size:128K  ixys
 ixfn39n90.pdf pdf_icon

IXFN32N100Q3

VDSS = 900 V IXFN 39N90 HiPerFETTM ID25 = 39 A Power MOSFETs RDS(on) = 0.22 Single MOSFET Die D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25 C to 150 C 900 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 900 ... See More ⇒

 9.2. Size:128K  ixys
 ixfn36n100.pdf pdf_icon

IXFN32N100Q3

HiPerFETTM IXFN 36N100 V = 1000V DSS Power MOSFETs ID25 = 36A Single Die MOSFET RDS(on) = 0.24 D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 1000 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V VGSM ... See More ⇒

 9.3. Size:128K  ixys
 ixfn34n80.pdf pdf_icon

IXFN32N100Q3

HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 800 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V VGSM Transi... See More ⇒

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Detailed specifications: IXFN26N120P , IXFN27N80Q , IXFN280N085 , IXFN300N10P , IXFN30N110P , IXFN30N120P , IXFN320N17T2 , IXFN32N100P , EMB04N03H , IXFN32N120 , IXFN32N120P , IXFN32N80P , IXFN340N06 , IXFN34N100 , IXFN360N10T , IXFN360N15T2 , IXFN36N110P .

History: SI5997DU | SI6404DQ

Keywords - IXFN32N100Q3 MOSFET specs

 IXFN32N100Q3 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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