IXFN32N120
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN32N120
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 780
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Id|ⓘ - Maximum Drain Current: 32
A
Qgⓘ - Total Gate Charge: 400
nC
trⓘ - Rise Time: 180
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35
Ohm
Package:
SOT227B
IXFN32N120
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN32N120
Datasheet (PDF)
7.1. Size:192K ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf 
IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1
9.1. Size:128K ixys
ixfn39n90.pdf
VDSS = 900 VIXFN 39N90HiPerFETTMID25 = 39 APower MOSFETsRDS(on) = 0.22 Single MOSFET DieD trr 250 ns N-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)VDSS TJ = 25C to 150C 900 VE153432VDGR TJ = 25C to 150C; RGS = 1 M 900
9.2. Size:128K ixys
ixfn36n100.pdf
HiPerFETTMIXFN 36N100 V = 1000VDSSPower MOSFETsID25 = 36ASingle Die MOSFET RDS(on) = 0.24DN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 1000 VSVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VVGSM
9.3. Size:128K ixys
ixfn34n80.pdf
HiPerFETTM Power MOSFETsIXFN 34N80 VDSS = 800 VSingle DieMOSFETID25 = 34 ARDS(on) = 0.24 WN-Channel Enhancement Mode DAvalanche Rated, High dv/dt, Low trrtrr 250 nsPreliminary data sheetSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 800 VSVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 VVGSM Transi
9.4. Size:104K ixys
ixfn340n07.pdf
HiPerFETTMIXFN 340N07 VDSS = 70 VPower MOSFETsID25 = 340 ASingle Die MOSFET RDS(on) = 4 mD trr 200 ns N-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C70 VSVDGR TJ = 25C to 150C; RGS = 1 M 70 VGVGS Co
9.5. Size:570K ixys
ixfn34n100.pdf
IXFN 34N100 VDSS = 1000VHiPerFETTMID25 = 34APower MOSFETsRDS(on) = 0.28Single Die MOSFETDN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trr GSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 1000 VSVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VVGSM Tran
Datasheet: IXFN27N80Q
, IXFN280N085
, IXFN300N10P
, IXFN30N110P
, IXFN30N120P
, IXFN320N17T2
, IXFN32N100P
, IXFN32N100Q3
, AO4468
, IXFN32N120P
, IXFN32N80P
, IXFN340N06
, IXFN34N100
, IXFN360N10T
, IXFN360N15T2
, IXFN36N110P
, IXFN38N100P
.
