IXFN40N110P
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN40N110P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 890
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5
V
|Id|ⓘ - Maximum Drain Current: 34
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 310
nC
trⓘ - Rise Time: 300
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package:
SOT227B
IXFN40N110P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN40N110P
Datasheet (PDF)
4.1. Size:120K ixys
ixfn40n110q3.pdf 
Advance Technical InformationHiperFETTM VDSS = 1100VIXFN40N110Q3Power MOSFET ID25 = 35A Q3-Class RDS(on) 260m N-Channel Enhancement ModeFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C, RGS = 1M 1100 VSVGSS Continuous 30 VDV
7.1. Size:113K ixys
ixfn40n90p.pdf
Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFN40N90PID25 = 33AHiPerFETTM RDS(on) 210m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227E153432VDSS TJ = 25C to 150C 900 VSVDGR TJ = 25C to 150C, RGS = 1
9.1. Size:179K ixys
ixfn420n10t.pdf
Advance Technical InformationGigaMOSTM Trench VDSS = 100VIXFN420N10THiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFETtrr 140nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227E153432Fast Intrinsic DiodeSGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175
9.2. Size:162K ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf
VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C
9.3. Size:84K ixys
ixfn48n60p.pdf
IXFN 48N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 40 APower MOSFET RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VminiBLOC, SOT-227 B (IXFN)VDGR TJ = 25C to 150C; RGS = 1 M 600 VE153432SVGSS Cont
9.4. Size:128K ixys
ixfn44n60.pdf
HiPerFETTMIXFN 44N60 VDSS = 600 VPower MOSFETsID25 = 44 ASingle Die MOSFET RDS(on) = 130 mWDtrr 250 nsN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 600 VSVDGR TJ = 25C to 150C; RGS = 1 MW 600 VGVGS Continuous 20 VVGSM Transient 30 VSI
9.5. Size:108K ixys
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf
VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C
9.6. Size:151K ixys
ixfn44n50u2-u3 ixfn48n50u2-u3.pdf
VDSS ID (cont) RDS(on) trrHiPerFETTM500 V 44 A 0.12 W 35 nsIXFN44N50U2 IXFN44N50U3Power MOSFETsIXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns3 3Buck & Boost Configurations forPFC & Motor Control Circuits422Preliminary data411miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VDSS TJ = 25C to 150C 500 V2VDGR TJ = 25C to 150C; RGS = 1 MW 5
9.7. Size:138K ixys
ixfn44n80.pdf
IXFN 44N80 VDSS = 800 VHiPerFETTMID25 = 44 APower MOSFETsRDS(on) = 0.165 Single MOSFET DieDN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)VDSS TJ = 25C to 150C 800 V E153432SVDGR TJ = 25C to 150C; RGS = 1 M 800 VGVGS Continuous 20 VVGSM Tran
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