IXFN44N50Q MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN44N50Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 481 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 44 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 190 nC
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT227B
IXFN44N50Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN44N50Q Datasheet (PDF)
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf
VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf
VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C
ixfn44n50u2-u3 ixfn48n50u2-u3.pdf
VDSS ID (cont) RDS(on) trrHiPerFETTM500 V 44 A 0.12 W 35 nsIXFN44N50U2 IXFN44N50U3Power MOSFETsIXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns3 3Buck & Boost Configurations forPFC & Motor Control Circuits422Preliminary data411miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VDSS TJ = 25C to 150C 500 V2VDGR TJ = 25C to 150C; RGS = 1 MW 5
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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