IXFN52N90P MOSFET: N-Ch, 900V, 43A. Full specification with pinout and replacement list

IXFN52N90P Specs

..1. Size:113K ixys
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Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFN52N90P ID25 = 43A HiPerFETTM RDS(on) 160m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25 C to 150 C 900 V G VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

9.1. Size:577K ixys
ixfk55n50 ixfx55n50 ixfn55n50.pdf pdf_icon

VDSS = 500 V IXFK 55N50 HiPerFETTM ID25 = 55 A IXFX 55N50 Power MOSFET RDS(on) = 90m IXFN 55N50 250 ns trr Single Die MOSFET Symbol Test Conditions Maximum Ratings PLUS247(IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C 500 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) G C ID25 TC = 25 C55 A E IDM TC = 2... See More ⇒

9.2. Size:121K ixys
ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf pdf_icon

VDSS ID25 RDS(on) trr HiPerFETTM Power MOSFET IXFN 55N50 500V 55A 80m 250ns IXFN 50N50 500V 50A 100m 250ns IXFK 55N50 500V 55A 80m 250ns Single Die MOSFET IXFK 50N50 500V 50A 100m 250ns Preliminary data sheet TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFN IXFK IXFK IXFN 55N50 50N50 55N50 50N50 VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C to 150 C... See More ⇒

9.3. Size:104K ixys
ixfn55n50f.pdf pdf_icon

Advance Technical Information HiPerRFTM IXFN 55N50F VDSS = 500 V Power MOSFETs ID25 = 55 A F-Class MegaHertz Switching RDS(on) = 85 m D N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, Low Intrinsic R G g High dV/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to ... See More ⇒

Detailed specifications: IXFN44N80P , IXFN44N80Q3 , IXFN48N50Q , IXFN48N50U2 , IXFN48N55 , IXFN48N60P , IXFN50N80Q2 , IXFN520N075T2 , IRFB4227 , IXFN56N90P , IXFN60N80P , IXFN62N80Q3 , IXFN64N50P , IXFN64N50PD2 , IXFN64N50PD3 , IXFN64N60P , IXFN66N50Q2 .