All MOSFET. IXFN80N50Q3 Datasheet

 

IXFN80N50Q3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFN80N50Q3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 780 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT227

 IXFN80N50Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFN80N50Q3 Datasheet (PDF)

 5.1. Size:157K  ixys
 ixfn80n50p.pdf

IXFN80N50Q3 IXFN80N50Q3

IXFN 80N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 66 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VS

 5.2. Size:572K  ixys
 ixfn80n50.pdf

IXFN80N50Q3 IXFN80N50Q3

IXFN 80N50 VDSS = 500 VHiPerFETTMID25 = 80 APower MOSFETsRDS(on) = 55 mSingle Die MOSFETD trr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrGSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VG

 9.1. Size:152K  ixys
 ixfn82n60p.pdf

IXFN80N50Q3 IXFN80N50Q3

IXFN 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 75 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 600 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M 600

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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