IXFN82N60Q3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFN82N60Q3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 960 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
|Id|ⓘ - Maximum Drain Current: 66 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 275 nC
trⓘ - Rise Time: 300 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT227
IXFN82N60Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFN82N60Q3 Datasheet (PDF)
ixfn82n60p.pdf
IXFN 82N60PVDSS = 600 VPolarHVTM HiPerFETID25 = 82 APower MOSFET RDS(on) 75 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 600 VSGVDGR TJ = 25 C to 150 C; RGS = 1 M 600
ixfn80n50p.pdf
IXFN 80N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 66 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VS
ixfn80n50.pdf
IXFN 80N50 VDSS = 500 VHiPerFETTMID25 = 80 APower MOSFETsRDS(on) = 55 mSingle Die MOSFETD trr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrGSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VG
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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