All MOSFET. IXFP12N50PM Datasheet

 

IXFP12N50PM Datasheet and Replacement


   Type Designator: IXFP12N50PM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220
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IXFP12N50PM Datasheet (PDF)

 7.1. Size:278K  ixys
 ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf pdf_icon

IXFP12N50PM

X2-Class HiPERFET VDSS = 650VIXFA12N65X2Power MOSFET ID25 = 12AIXFP12N65X2 RDS(on) 310m IXFH12N65X2N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGSM Tr

 7.2. Size:200K  inchange semiconductor
 ixfp12n65x2m.pdf pdf_icon

IXFP12N50PM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFP12N65X2MFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV G

 7.3. Size:253K  inchange semiconductor
 ixfp12n65x2.pdf pdf_icon

IXFP12N50PM

isc N-Channel MOSFET Transistor IXFP12N65X2FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-Source Voltage 30 V

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History: IRFI7536G | FDMS9620S | WMM11N80M3

Keywords - IXFP12N50PM MOSFET datasheet

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