IXFP3N50PM
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFP3N50PM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.3
nC
trⓘ - Rise Time: 200
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
TO220
IXFP3N50PM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFP3N50PM
Datasheet (PDF)
..1. Size:107K ixys
ixfp3n50pm.pdf 
Preliminary Technical InformationVDSS = 500 VIXFP 3N50PMPolarHVTM HiPerFETID25 = 2.7 APower MOSFET RDS(on) 2.0 (Electrically Isolated Tab)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220(IXTP...M) OUTLINEVDSS TJ = 25 C t
8.1. Size:565K ixys
ixfa3n120 ixfp3n120.pdf
IXFA 3N120 VDSS =1200 VHiPerFETTMIXFP 3N120 ID25 = 3 APower MOSFETsRDS(on) = 4.5 trr 300 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXFP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VD (TAB)VGS Conti
9.1. Size:155K ixys
ixfa36n30p3 ixfp36n30p3.pdf
Preliminary Technical InformationPolar3 TM HiPerFETTM VDSS = 300VIXFA36N30P3Power MOSFET ID25 = 36AIXFP36N30P3 RDS(on) 110m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-263AA (IXFA)GSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VTO-220AB (IXFP)VDGR TJ = 25C to 150
9.2. Size:184K ixys
ixfp36n20x3m.pdf
Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 200VIXFP36N20X3MPower MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab)OVERMOLDEDTO-220N-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsGIsolated TabDVDSS TJ = 25C to 150C 200 V SVDGR TJ = 25C to 150C, RGS = 1M 200 VG = Gate D =
9.3. Size:138K ixys
ixfp34n65x2m.pdf
Preliminary Technical InformationX2-Class HiperFETTM VDSS = 650VIXFP34N65X2MPower MOSFET ID25 = 34A RDS(on) 100m (Electrically Isolated Tab)N-Channel Enhancement Mode OVERMOLDEDTO-220Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGIsolated TabDVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Contin
9.4. Size:310K ixys
ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf
VDSS = 200VX3-Class HiPERFETTM IXFY36N20X3ID25 = 36APower MOSFETIXFA36N20X3 RDS(on) 45m IXFP36N20X3N-Channel Enhancement ModeTO-252 (IXFY)G SD (Tab)TO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGSVDGR TJ = 25C to 150C, RGS = 1M 200 VD (Tab)VGSS Continuous 20 VTO-220
9.5. Size:282K ixys
ixfp34n65x2 ixfh34n65x2.pdf
X2-Class HiPerFETTM VDSS = 650VIXFP34N65X2Power MOSFET ID25 = 34AIXFH34N65X2 RDS(on) 100m N-Channel Enhancement ModeAvalanche RatedTO-220(IXFP)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 650 VSD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 650 VTO-247VGSS Continuous 30 V(IXFH)VGSM Transien
9.6. Size:206K ixys
ixfa30n60x ixfp30n60x.pdf
Advance Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA30N60XPower MOSFET ID25 = 30AIXFP30N60X RDS(on) 155m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)Fast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C, RGS = 1M
9.7. Size:205K ixys
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf
X2-Class HiPerFETTM VDSS = 650VIXFA34N65X2Power MOSFET ID25 = 34AIXFP34N65X2 RDS(on) 100m IXFH34N65X2N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGS
9.8. Size:254K inchange semiconductor
ixfp36n20x3m.pdf
isc N-Channel MOSFET Transistor IXFP36N20X3MFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
9.9. Size:205K inchange semiconductor
ixfp34n65x2.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFP34N65X2FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Ga
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