IXFQ10N80P PDF and Equivalents Search

 

IXFQ10N80P Specs and Replacement


   Type Designator: IXFQ10N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO3P
 

 IXFQ10N80P substitution

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IXFQ10N80P datasheet

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Detailed specifications: IXFP5N100P , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IXFP7N100P , IXFP7N80P , IXFP7N80PM , IXFP8N50PM , RFP50N06 , IXFQ12N80P , IXFQ14N80P , IXFQ22N60P3 , IXFQ24N50P2 , IXFQ28N60P3 , IXFQ50N60P3 , IXFQ60N50P3 , IXFR100N25 .

Keywords - IXFQ10N80P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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