IXFQ10N80P Datasheet. Specs and Replacement

Type Designator: IXFQ10N80P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO3P

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IXFQ10N80P datasheet

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Detailed specifications: IXFP5N100P, IXFP5N50PM, IXFP6N120P, IXFP76N15T2, IXFP7N100P, IXFP7N80P, IXFP7N80PM, IXFP8N50PM, 18N50, IXFQ12N80P, IXFQ14N80P, IXFQ22N60P3, IXFQ24N50P2, IXFQ28N60P3, IXFQ50N60P3, IXFQ60N50P3, IXFR100N25

Keywords - IXFQ10N80P MOSFET specs

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