IXFQ24N50P2 MOSFET Datasheet: N-Ch, 500V, 24A. Full specification with pinout and replacement list

IXFQ24N50P2 Specs and Replacement

Type Designator: IXFQ24N50P2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 480 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO3P

IXFQ24N50P2 substitution

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IXFQ24N50P2 datasheet

7.1. Size:155K ixys
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf pdf_icon

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X RDS(on) 175m IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ ... See More ⇒

9.1. Size:157K ixys
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf pdf_icon

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 RDS(on) 300m IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ... See More ⇒

9.2. Size:155K ixys
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf pdf_icon

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ... See More ⇒

9.3. Size:130K ixys
ixfq28n60p3 ixfh28n60p3.pdf pdf_icon

Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 RDS(on) 260m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-247 ( IX... See More ⇒

Detailed specifications: IXFP7N100P , IXFP7N80P , IXFP7N80PM , IXFP8N50PM , IXFQ10N80P , IXFQ12N80P , IXFQ14N80P , IXFQ22N60P3 , 20N50 , IXFQ28N60P3 , IXFQ50N60P3 , IXFQ60N50P3 , IXFR100N25 , IXFR102N30P , IXFR140N20P , IXFR140N30P , IXFR14N100Q2 .