IXFR18N90P Datasheet. Specs and Replacement

Type Designator: IXFR18N90P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm

Package: ISOPLUS247

IXFR18N90P substitution

- MOSFET ⓘ Cross-Reference Search

 

IXFR18N90P datasheet

 8.1. Size:152K  ixys
 ixfr180n15p.pdf pdf_icon

IXFR18N90P

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 13 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ... See More ⇒

 8.2. Size:33K  ixys
 ixfr180n10.pdf pdf_icon

IXFR18N90P

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25 ... See More ⇒

 8.3. Size:57K  ixys
 ixfr180n085.pdf pdf_icon

IXFR18N90P

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C... See More ⇒

 8.4. Size:32K  ixys
 ixfr180n07.pdf pdf_icon

IXFR18N90P

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 70 V G VGS Continuous 20 V D VGSM Transient 30 V Isolated back surface* ID... See More ⇒

SHOW MORE

Detailed specifications: IXFR140N20P, IXFR140N30P, IXFR14N100Q2, IXFR150N15, IXFR15N100Q3, IXFR16N120P, IXFR180N06, IXFR180N15P, IRFZ48N, IXFR200N10P, IXFR20N100P, IXFR20N120P, IXFR20N80P, IXFR21N100Q, IXFR230N20T, IXFR24N80P, IXFR24N90P

Keywords - IXFR18N90P MOSFET specs

 IXFR18N90P cross reference

 IXFR18N90P equivalent finder

 IXFR18N90P pdf lookup

 IXFR18N90P substitution

 IXFR18N90P replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.