All MOSFET. IXFR20N100P Equivalents Search

 

IXFR20N100P Spec and Replacement


   Type Designator: IXFR20N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
   Package: ISOPLUS247

 IXFR20N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR20N100P Specs

 7.1. Size:133K  ixys
ixfc20n80p ixfr20n80p.pdf pdf_icon

IXFR20N100P

IXFC 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFR 20N80P ID25 = 10 A Power MOSFET RDS(on) 500 m Electrically Isolated Back Surface trr 250 ns N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) VDSS TJ = 25 C to 150 C 800 V E153432 VDGR TJ = 25 C to... See More ⇒

 8.1. Size:101K  ixys
ixfr200n10p.pdf pdf_icon

IXFR20N100P

VDSS = 100 V IXFR 200N10P PolarTM HiPerFET ID25 = 133 A Power MOSFET RDS(on) 9 m Electrically Isolated Tab tRR 150 ns N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V ISOPLUS247 (IXFR) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V E15343... See More ⇒

 9.1. Size:94K  ixys
ixfr24n80p.pdf pdf_icon

IXFR20N100P

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

 9.2. Size:112K  ixys
ixfr24n100.pdf pdf_icon

IXFR20N100P

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET RDS(on) 390m ISOPLUS247TM t 250ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Co... See More ⇒

Detailed specifications: IXFR14N100Q2 , IXFR150N15 , IXFR15N100Q3 , IXFR16N120P , IXFR180N06 , IXFR180N15P , IXFR18N90P , IXFR200N10P , IRF830 , IXFR20N120P , IXFR20N80P , IXFR21N100Q , IXFR230N20T , IXFR24N80P , IXFR24N90P , IXFR24N90Q , IXFR26N100P .

History: PM550BA

Keywords - IXFR20N100P MOSFET specs

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