IXFR20N120P
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFR20N120P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 290
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 193
nC
trⓘ - Rise Time: 300
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.63
Ohm
Package:
ISOPLUS247
IXFR20N120P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFR20N120P
Datasheet (PDF)
7.1. Size:133K ixys
ixfc20n80p ixfr20n80p.pdf 
IXFC 20N80P VDSS = 800 VPolarHVTM HiPerFETIXFR 20N80P ID25 = 10 APower MOSFET RDS(on) 500 m Electrically Isolated Back Surfacetrr 250 nsN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25C to 150C 800 VE153432VDGR TJ = 25C to
8.1. Size:101K ixys
ixfr200n10p.pdf
VDSS = 100 VIXFR 200N10PPolarTM HiPerFETID25 = 133 APower MOSFET RDS(on) 9 m Electrically Isolated TabtRR 150 nsN-Channel Enhancement ModeFast Recovery Diode, Avavanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VISOPLUS247 (IXFR)VDGR TJ = 25C to 175C; RGS = 1 M 100 V E15343
9.1. Size:94K ixys
ixfr24n80p.pdf
IXFR 24N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 13 APower MOSFET RDS(on) 420 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RG
9.2. Size:112K ixys
ixfr24n100.pdf
HiPerFETTM Power VDSS = 1000VIXFR24N100ID25 = 22AMOSFET RDS(on) 390m ISOPLUS247TMt 250ns(Electrically Isolated Back Surface)rrN-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Co
9.3. Size:33K ixys
ixfr24n50 ixfr26n50.pdf
Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50
9.4. Size:141K ixys
ixfr24n100q3.pdf
Advance Technical InformationHiperFETTM VDSS = 1000VIXFR24N100Q3Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns(Electrically Isolated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, R
9.5. Size:54K ixys
ixfr27n80q.pdf
IXFK 27N80QHiPerFETTM VDSS = 800 VIXFR 27N80QID25 = 27 APower MOSFETsIXFX 27N80QRDS(on) = 300 mWQ-CLASSSingle MOSFET Die trr 250 nsPLUS 247TM (IXFX)N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dV/dt, Low trr (TAB)GDSymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VG
9.6. Size:78K ixys
ixfr24n50q ixfr26n50q.pdf
VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TMIXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement ModeHigh dV/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C to 150C
Datasheet: IXFR150N15
, IXFR15N100Q3
, IXFR16N120P
, IXFR180N06
, IXFR180N15P
, IXFR18N90P
, IXFR200N10P
, IXFR20N100P
, IRFP064N
, IXFR20N80P
, IXFR21N100Q
, IXFR230N20T
, IXFR24N80P
, IXFR24N90P
, IXFR24N90Q
, IXFR26N100P
, IXFR26N120P
.
