All MOSFET. IXFR21N100Q Datasheet

 

IXFR21N100Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFR21N100Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: ISOPLUS247

 IXFR21N100Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR21N100Q Datasheet (PDF)

 9.1. Size:94K  ixys
 ixfr24n80p.pdf

IXFR21N100Q IXFR21N100Q

IXFR 24N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 13 APower MOSFET RDS(on) 420 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RG

 9.2. Size:112K  ixys
 ixfr24n100.pdf

IXFR21N100Q IXFR21N100Q

HiPerFETTM Power VDSS = 1000VIXFR24N100ID25 = 22AMOSFET RDS(on) 390m ISOPLUS247TMt 250ns(Electrically Isolated Back Surface)rrN-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Co

 9.3. Size:33K  ixys
 ixfr24n50 ixfr26n50.pdf

IXFR21N100Q IXFR21N100Q

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50

 9.4. Size:133K  ixys
 ixfc20n80p ixfr20n80p.pdf

IXFR21N100Q IXFR21N100Q

IXFC 20N80P VDSS = 800 VPolarHVTM HiPerFETIXFR 20N80P ID25 = 10 APower MOSFET RDS(on) 500 m Electrically Isolated Back Surfacetrr 250 nsN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25C to 150C 800 VE153432VDGR TJ = 25C to

 9.5. Size:141K  ixys
 ixfr24n100q3.pdf

IXFR21N100Q IXFR21N100Q

Advance Technical InformationHiperFETTM VDSS = 1000VIXFR24N100Q3Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns(Electrically Isolated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, R

 9.6. Size:54K  ixys
 ixfr27n80q.pdf

IXFR21N100Q IXFR21N100Q

IXFK 27N80QHiPerFETTM VDSS = 800 VIXFR 27N80QID25 = 27 APower MOSFETsIXFX 27N80QRDS(on) = 300 mWQ-CLASSSingle MOSFET Die trr 250 nsPLUS 247TM (IXFX)N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dV/dt, Low trr (TAB)GDSymbol Test Conditions Maximum RatingsTO-264 AA (IXFK)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VG

 9.7. Size:78K  ixys
 ixfr24n50q ixfr26n50q.pdf

IXFR21N100Q IXFR21N100Q

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TMIXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement ModeHigh dV/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C to 150C

 9.8. Size:101K  ixys
 ixfr200n10p.pdf

IXFR21N100Q IXFR21N100Q

VDSS = 100 VIXFR 200N10PPolarTM HiPerFETID25 = 133 APower MOSFET RDS(on) 9 m Electrically Isolated TabtRR 150 nsN-Channel Enhancement ModeFast Recovery Diode, Avavanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VISOPLUS247 (IXFR)VDGR TJ = 25C to 175C; RGS = 1 M 100 V E15343

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXFN50N50

 

 
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