All MOSFET. IXFR26N100P Equivalents Search

 

IXFR26N100P Spec and Replacement


   Type Designator: IXFR26N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: ISOPLUS247

 IXFR26N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR26N100P Specs

 7.1. Size:33K  ixys
ixfr24n50 ixfr26n50.pdf pdf_icon

IXFR26N100P

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50 500 V 24 A 0.20 W ISOPLUS247TM IXFR 24N50 500 V 22 A 0.23 W (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 50... See More ⇒

 7.2. Size:78K  ixys
ixfr24n50q ixfr26n50q.pdf pdf_icon

IXFR26N100P

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TM IXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement Mode High dV/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C... See More ⇒

 9.1. Size:94K  ixys
ixfr24n80p.pdf pdf_icon

IXFR26N100P

IXFR 24N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 13 A Power MOSFET RDS(on) 420 m (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

 9.2. Size:112K  ixys
ixfr24n100.pdf pdf_icon

IXFR26N100P

HiPerFETTM Power VDSS = 1000V IXFR24N100 ID25 = 22A MOSFET RDS(on) 390m ISOPLUS247TM t 250ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Co... See More ⇒

Detailed specifications: IXFR20N100P , IXFR20N120P , IXFR20N80P , IXFR21N100Q , IXFR230N20T , IXFR24N80P , IXFR24N90P , IXFR24N90Q , MMIS60R580P , IXFR26N120P , IXFR26N60Q , IXFR30N110P , IXFR30N60P , IXFR32N100P , IXFR32N100Q3 , IXFR32N80P , IXFR32N80Q3 .

Keywords - IXFR26N100P MOSFET specs

 IXFR26N100P cross reference
 IXFR26N100P equivalent finder
 IXFR26N100P lookup
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