IXFR44N50P Datasheet and Replacement. Cross Reference Search

IXFR44N50P Datasheet (PDF)

..1. Size:153K ixys
ixfr44n50p.pdf pdf_icon

IXFR 44N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 24 APower MOSFET RDS(on) 150 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel EnhancementAvalanche RatedFast Intrinsic DiodeISOPLUS247 (IXFR)E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25

5.1. Size:156K ixys
ixfr44n50q3.pdf pdf_icon

Advance Technical InformationHiperFETTM VDSS = 500VIXFR44N50Q3Pwer MOSFET ID25 = 25AQ3-CIass RDS(n) 154m trr 250ns(EIectricaIIy IsIated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432SymbI Test Cnditins Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VGVGSM Transient 40

7.1. Size:34K ixys
ixfr44n60.pdf pdf_icon

HiPerFETTM Power MOSFETsIXFR 44N60 VDSS = 600 VISOPLUS247TMID25 = 38 A(Electrically Isolated Back Surface)RDS(on)= 130 mWSingle MOSFET Dietrr 250 nsISOPLUS 247TMSymbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 VVGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C38 AG = Gate D = Drain

7.2. Size:101K ixys
ixfr44n80p.pdf pdf_icon

IXFR 44N80P VDSS = 800 VPolarHVTM HiPerFETID25 = 25 APower MOSFET RDS(on) 200 m Electrically Isolated Tabtrr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 8

Datasheet: IXFR32N80P , IXFR32N80Q3 , IXFR34N80 , IXFR36N50P , IXFR36N60P , IXFR38N80Q2 , IXFR40N50Q2 , IXFR40N90P , IRF640 , IXFR44N50Q , IXFR44N60 , IXFR44N80P , IXFR48N50Q , IXFR48N60P , IXFR48N60Q3 , IXFR4N100Q , IXFR64N50P .