IXFR64N60P Spec and Replacement
Type Designator: IXFR64N60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: ISOPLUS247
IXFR64N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFR64N60P Specs
ixfr64n60p.pdf
VDSS = 600 V PolarHVTM HiPerFET IXFR 64N60P ID25 = 36 A Power MOSFET RDS(on) 105 m trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒
ixfr64n50p.pdf
IXFR 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 35 A Power MOSFET RDS(on) 95 m ISOPLUS247TM trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ ... See More ⇒
Detailed specifications: IXFR44N60 , IXFR44N80P , IXFR48N50Q , IXFR48N60P , IXFR48N60Q3 , IXFR4N100Q , IXFR64N50P , IXFR64N50Q3 , IRF3710 , IXFR64N60Q3 , IXFR66N50Q2 , IXFR70N15 , IXFR80N15Q , IXFR80N50P , IXFR80N50Q3 , IXFR80N60P3 , IXFR90N30 .
History: BL40N25-F
Keywords - IXFR64N60P MOSFET specs
IXFR64N60P cross reference
IXFR64N60P equivalent finder
IXFR64N60P lookup
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IXFR64N60P replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BL40N25-F
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