All MOSFET. IXFR64N60Q3 Datasheet

 

IXFR64N60Q3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFR64N60Q3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 568 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 6.5 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 300 nS

Maximum Drain-Source On-State Resistance (Rds): 0.104 Ohm

Package: ISOPLUS247

IXFR64N60Q3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFR64N60Q3 Datasheet (PDF)

1.1. ixfr64n60p.pdf Size:151K _ixys

IXFR64N60Q3
IXFR64N60Q3

VDSS = 600 V PolarHVTM HiPerFET IXFR 64N60P ID25 = 36 A Power MOSFET ? ? RDS(on) ? 105 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continu

3.1. ixfr64n50p.pdf Size:143K _ixys

IXFR64N60Q3
IXFR64N60Q3

IXFR 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 35 A Power MOSFET ? ? RDS(on) ? 95 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V

Datasheet: IXFR44N80P , IXFR48N50Q , IXFR48N60P , IXFR48N60Q3 , IXFR4N100Q , IXFR64N50P , IXFR64N50Q3 , IXFR64N60P , RFP50N06 , IXFR66N50Q2 , IXFR70N15 , IXFR80N15Q , IXFR80N50P , IXFR80N50Q3 , IXFR80N60P3 , IXFR90N30 , IXFT120N15P .

 


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