IXFR80N15Q Datasheet. Specs and Replacement
Type Designator: IXFR80N15Q 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
Package: ISOPLUS247
IXFR80N15Q substitution
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IXFR80N15Q datasheet
ixfr80n10q.pdf
HiPerFETTM Power MOSFETs IXFR 80N10Q VDSS = 100 V ISOPLUS247TM, Q-Class ID25 = 76 A (Electrically Isolated Back Surface) RDS(on) = 15 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Cont... See More ⇒
ixfr80n50p.pdf
PolarHVTM HiPerFET IXFR 80N50P VDSS = 500 V Power MOSFET ID25 = 45 A ISOPLUS247TM RDS(on) 72 m trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS247 (IXFR) VDGR TJ = 25 C to... See More ⇒
ixfr80n20q.pdf
HiPerFETTM Power MOSFETs IXFR 80N20Q VDSS = 200 V ISOPLUS247TM, Q-Class ID25 = 71 A (Electrically Isolated Back Surface) RDS(on) = 28mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V VGS Continuous ... See More ⇒
Detailed specifications: IXFR48N60Q3, IXFR4N100Q, IXFR64N50P, IXFR64N50Q3, IXFR64N60P, IXFR64N60Q3, IXFR66N50Q2, IXFR70N15, 2N7000, IXFR80N50P, IXFR80N50Q3, IXFR80N60P3, IXFR90N30, IXFT120N15P, IXFT12N100F, IXFT12N50F, IXFT12N90Q
Keywords - IXFR80N15Q MOSFET specs
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