IXFT21N50Q Datasheet. Specs and Replacement

Type Designator: IXFT21N50Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO268

IXFT21N50Q substitution

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IXFT21N50Q datasheet

 9.1. Size:158K  ixys
 ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

IXFT21N50Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to... See More ⇒

 9.2. Size:145K  ixys
 ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

IXFT21N50Q

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 ... See More ⇒

 9.3. Size:577K  ixys
 ixft23n80q.pdf pdf_icon

IXFT21N50Q

IXFH23N80Q VDSS = 800 V HiPerFETTM IXFT23N80Q ID25 = 23 A Power MOSFETs RDS(on) = 0.42 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V (TAB) VGS Continuous 30... See More ⇒

 9.4. Size:122K  ixys
 ixft24n90p ixfh24n90p.pdf pdf_icon

IXFT21N50Q

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM RDS(on) 420m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

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Detailed specifications: IXFT16N120P, IXFT16N80P, IXFT16N90Q, IXFT18N90P, IXFT20N100P, IXFT20N80P, IXFT21N50, IXFT21N50F, 12N60, IXFT24N50, IXFT24N50Q, IXFT24N80P, IXFT24N90P, IXFT26N50, IXFT26N60P, IXFT28N50F, IXFT30N40Q

Keywords - IXFT21N50Q MOSFET specs

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