All MOSFET. IXFT340N075T2 Datasheet

 

IXFT340N075T2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFT340N075T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 935 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 340 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 300 nC
   trⓘ - Rise Time: 75 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO268

 IXFT340N075T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFT340N075T2 Datasheet (PDF)

 ..1. Size:182K  ixys
 ixfh340n075t2 ixft340n075t2.pdf

IXFT340N075T2 IXFT340N075T2

Advance Technical InformationTrenchT2TM HiPerFETTM VDSS = 75VIXFH340N075T2ID25 = 340APower MOSFETIXFT340N075T2 RDS(on) 3.2m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (TAB)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSM Tra

 9.1. Size:320K  ixys
 ixfh30n50p ixft30n50p ixfv30n50p.pdf

IXFT340N075T2 IXFT340N075T2

VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to

 9.2. Size:110K  ixys
 ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf

IXFT340N075T2 IXFT340N075T2

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

 9.3. Size:109K  ixys
 ixft30n50q.pdf

IXFT340N075T2 IXFT340N075T2

VDSS ID25 RDS(on)HiPerFETTMPower MOSFETsIXFH/IXFT 30N50Q 500 V 30 A 0.16 IXFH/IXFT 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS =

 9.4. Size:567K  ixys
 ixfh32n50q ixft32n50q.pdf

IXFT340N075T2 IXFT340N075T2

IXFH 32N50Q VDSS ID25 RDS(on)HiPerFETTMIXFT 32N50QPower MOSFETs500 V 32 A 0.16 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 50

 9.5. Size:186K  ixys
 ixfh320n10t2 ixft320n10t2.pdf

IXFT340N075T2 IXFT340N075T2

Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 100VIXFH320N10T2ID25 = 320APower MOSFETIXFT320N10T2 RDS(on) 3.5m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXFH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-268

 9.6. Size:268K  ixys
 ixfh36n60p ixft36n60p ixfk36n60p.pdf

IXFT340N075T2 IXFT340N075T2

IXFH 36N60P VDSS = 600 VPolarHVTM HiPerFETIXFK 36N60P ID25 = 36 APower MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

 9.7. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf

IXFT340N075T2 IXFT340N075T2

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150

 9.8. Size:338K  ixys
 ixfh36n50p ixft36n50p ixfv36n50p.pdf

IXFT340N075T2 IXFT340N075T2

IXFH 36N50P VDSS = 500 VPolarHVTM HiPerFETIXFT 36N50P ID25 = 36 APower MOSFETIXFV 36N50P RDS(on) 170 m N-Channel Enhancement ModeIXFV 36N50PS trr 200 msAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS

 9.9. Size:583K  ixys
 ixft30n60q.pdf

IXFT340N075T2 IXFT340N075T2

IXFH 30N60Q VDSS = 600 VHiPerFETTMIXFT 30N60Q ID25 = 30 APower MOSFETsRDS(on) = 0.23 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB

 9.10. Size:324K  ixys
 ixfh30n60p ixfv30n60p ixft30n60p.pdf

IXFT340N075T2 IXFT340N075T2

IXFH 30N60P VDSS = 600 VPolarHVTM HiPerFETIXFT 30N60P ID25 = 30 APower MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXFV 30N60PS trr 200 nsFast Recovery DiodeAvalanche RatedPLUS220 (IXFV)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS

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History: IXTP130N10T

 

 
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