IXFT36N60P Datasheet. Specs and Replacement

Type Designator: IXFT36N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 650 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 102 nC

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO268

IXFT36N60P substitution

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IXFT36N60P datasheet

 ..1. Size:268K  ixys
 ixfh36n60p ixft36n60p ixfk36n60p.pdf pdf_icon

IXFT36N60P

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V ... See More ⇒

 7.1. Size:338K  ixys
 ixfh36n50p ixft36n50p ixfv36n50p.pdf pdf_icon

IXFT36N60P

IXFH 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFT 36N50P ID25 = 36 A Power MOSFET IXFV 36N50P RDS(on) 170 m N-Channel Enhancement Mode IXFV 36N50PS trr 200 ms Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS ... See More ⇒

 9.1. Size:320K  ixys
 ixfh30n50p ixft30n50p ixfv30n50p.pdf pdf_icon

IXFT36N60P

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to ... See More ⇒

 9.2. Size:110K  ixys
 ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf pdf_icon

IXFT36N60P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC ... See More ⇒

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Detailed specifications: IXFT28N50F, IXFT30N40Q, IXFT30N50P, IXFT30N50Q3, IXFT30N60P, IXFT320N10T2, IXFT340N075T2, IXFT36N50P, IRFP250, IXFT400N075T2, IXFT42N50P2, IXFT44N50P, IXFT50N30Q3, IXFT50N60P3, IXFT52N50P2, IXFT58N20, IXFT60N20

Keywords - IXFT36N60P MOSFET specs

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