IXFT52N50P2
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT52N50P2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 960
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 52
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 113
nC
trⓘ - Rise Time: 250
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12
Ohm
Package:
TO268
IXFT52N50P2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT52N50P2
Datasheet (PDF)
..1. Size:127K ixys
ixft52n50p2 ixfh52n50p2.pdf 
Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH52N50P2ID25 = 52APower MOSFETIXFT52N50P2 RDS(on) 120m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXFH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-268 (IXFT)VDGR TJ = 25C to 150C, RGS = 1M 50
7.1. Size:70K ixys
ixfh52n30q ixfk52n30q ixft52n30q.pdf
IXFH 52N30QHiPerFETTMVDSS = 300 VIXFK 52N30QPower MOSFETs ID25 = 52 AIXFT 52N30QQ-Class RDS(on) = 60 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuo
9.1. Size:104K ixys
ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf
VDSS ID25 RDS(on)HiPerFETTMPower MOSFETs 200 V 42 A 60mWIXFH/IXFM42N20200 V 50 A 45mWIXFH/IXFM/IXFT50N20200 V 58 A 40mWIXFH/IXFT58N20N-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)(TAB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case StyleVG
9.2. Size:355K ixys
ixfh58n20q ixft58n20q.pdf
IXFH 58N20QVDSS = 200 VHiPerFETTMIXFT 58N20QID25 = 58 APower MOSFETsRDS(on) = 40 mWQ-Classtrr 200 nsN-Channel Enhancement ModeAvalanche Rated High dv/dt, Low QgPreliminary data sheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGS Continuous 20 VG(TAB)
9.3. Size:294K ixys
ixft50n85xhv ixfh50n85x ixfk50n85x.pdf
X-Class HiPerFETTM VDSS = 850VIXFT50N85XHVPower MOSFET ID25 = 50AIXFH50N85X RDS(on) 105m IXFK50N85XTO-268HV (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeS D (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Co
9.4. Size:102K ixys
ixft50n20.pdf
VDSS ID25 RDS(on)HiPerFETTMPower MOSFETs 200 V 42 A 60mWIXFH/IXFM42N20200 V 50 A 45mWIXFH/IXFM/IXFT50N20200 V 58 A 40mWIXFH/IXFT58N20N-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)(TAB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case StyleVG
9.5. Size:184K ixys
ixfh50n60x ixfq50n60x ixft50n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT50N60XPower MOSFET ID25 = 50AIXFQ50N60X RDS(on) 73m IXFH50N60XN-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic DiodeGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDVDGR TJ = 25C to 1
9.6. Size:139K ixys
ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf
Polar3TM HiperFETTM VDSS = 500VIXFT50N50P3ID25 = 50APower MOSFETIXFQ50N50P3 RDS(on) 125m IXFH50N50P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C, RGS = 1M 500 VD
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