IXFT80N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT80N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 180 nC
trⓘ - Rise Time: 200 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO268
IXFT80N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT80N08 Datasheet (PDF)
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IXFH 80N085 VDSS = 85 VHiPerFETTMIXFT 80N085 ID25 = 80 APower MOSFETsRDS(on) = 9 mWN-Channel Enhancement Modetrr 200 nsAvalanche Rated, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID25 TC = 25C80 AIL
ixfh80n10q ixft80n10q.pdf
IXFH 80N10Q VDSS = 100 VHiPerFETTMIXFT 80N10Q ID25 = 80 APower MOSFETs RDS(on) = 15 mWQ-Classtrr 200nsN-Channel Enhancement ModeAvalanche Rated, High dV/dtLow Gate Charge and CapacitancesPreliminary dataTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VVGSM Trans
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IXFH 80N20QHiPerFETTMVDSS = 200 VIXFK 80N20QPower MOSFETs ID25 = 80 AIXFT 80N20QQ-Class RDS(on) = 28 mWtrr 200 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V(TAB)VGS Continuous 20 VVGSM Transi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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