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IXFT80N085 Spec and Replacement


   Type Designator: IXFT80N085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO268

 IXFT80N085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFT80N085 Specs

 ..1. Size:54K  ixys
 ixfh80n085 ixft80n085.pdf pdf_icon

IXFT80N085

IXFH 80N085 VDSS = 85 V HiPerFETTM IXFT 80N085 ID25 = 80 A Power MOSFETs RDS(on) = 9 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C80 A IL... See More ⇒

 7.1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf pdf_icon

IXFT80N085

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans... See More ⇒

 7.2. Size:70K  ixys
 ixfh80n20q ixfk80n20q ixft80n20q.pdf pdf_icon

IXFT80N085

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transi... See More ⇒

 9.1. Size:176K  ixys
 ixfh86n30t ixft86n30t.pdf pdf_icon

IXFT80N085

Advance Technical Information TrenchTM HiperFETTM VDSS = 300V IXFH86N30T Power MOSFET ID25 = 86A IXFT86N30T RDS(on) 43m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 300 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 300 V VGSS Continu... See More ⇒

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Detailed specifications: IXFT68N20 , IXFT69N30P , IXFT6N100F , IXFT70N15 , IXFT70N20Q3 , IXFT74N20 , IXFT7N90Q , IXFT80N08 , STP65NF06 , IXFT80N10 , IXFT80N15Q , IXFT86N30T , IXFT88N30P , IXFT96N20P , IXFV10N100P , IXFV10N100PS , IXFV110N10P .

Keywords - IXFT80N085 MOSFET specs

 IXFT80N085 cross reference
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