IXFV12N100PS MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXFV12N100PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 463 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: PLUS220SMD

IXFV12N100PS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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