All MOSFET. IXFV18N90P Datasheet

 

IXFV18N90P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFV18N90P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 97 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: PLUS220

 IXFV18N90P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFV18N90P Datasheet (PDF)

 7.1. Size:172K  ixys
 ixfh18n60p ixfv18n60p.pdf

IXFV18N90P IXFV18N90P

IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co

 9.1. Size:309K  ixys
 ixfh110n10p ixfv110n10p.pdf

IXFV18N90P IXFV18N90P

IXFH 110N10P VDSS = 100 VPolarHTTM HiPerFETIXFV 110N10P ID25 = 110 APower MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100

 9.2. Size:179K  ixys
 ixfh12n90p ixfv12n90p-s.pdf

IXFV18N90P IXFV18N90P

Preliminary Technical InformationIXFH12N90P VDSS = 900VPolarTM Power MOSFETIXFV12N90P ID25 = 12AHiPerFETTM RDS(on) 900m IXFV12N90PS trr 300nsN-Channel Enhancement ModeAvalanche RatedPLUS220 (IXFV)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 900 VD (TAB)VDGR TJ

 9.3. Size:176K  ixys
 ixfh12n120p ixfv12n120p ixfv12n120ps.pdf

IXFV18N90P IXFV18N90P

IXFH12N120P VDSS = 1200VPolarTM Power MOSFETIXFV12N120P ID25 = 12AHiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic Diode PLUS220 (IXFV)GDSSymbol Test Conditions Maximum RatingsD (TAB)VDSS TJ = 25C to 150C 1200 VPLUS220SMD (IXFV_S)VDGR TJ = 25C to 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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