IXFV18N90PS Datasheet. Specs and Replacement

Type Designator: IXFV18N90PS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: PLUS220SMD

IXFV18N90PS substitution

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IXFV18N90PS datasheet

 7.1. Size:172K  ixys
 ixfh18n60p ixfv18n60p.pdf pdf_icon

IXFV18N90PS

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Co... See More ⇒

 9.1. Size:309K  ixys
 ixfh110n10p ixfv110n10p.pdf pdf_icon

IXFV18N90PS

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100... See More ⇒

 9.2. Size:179K  ixys
 ixfh12n90p ixfv12n90p-s.pdf pdf_icon

IXFV18N90PS

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM RDS(on) 900m IXFV12N90PS trr 300ns N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 900 V D (TAB) VDGR TJ ... See More ⇒

 9.3. Size:176K  ixys
 ixfh12n120p ixfv12n120p ixfv12n120ps.pdf pdf_icon

IXFV18N90PS

IXFH12N120P VDSS = 1200V PolarTM Power MOSFET IXFV12N120P ID25 = 12A HiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G DS Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 150 C 1200 V PLUS220SMD (IXFV_S) VDGR TJ = 25 C to 1... See More ⇒

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Detailed specifications: IXFV14N80PS, IXFV15N100P, IXFV15N100PS, IXFV16N80P, IXFV16N80PS, IXFV18N60P, IXFV18N60PS, IXFV18N90P, IRFZ44, IXFV20N80P, IXFV20N80PS, IXFV22N50P, IXFV22N50PS, IXFV22N60P, IXFV22N60PS, IXFV26N50P, IXFV26N50PS

Keywords - IXFV18N90PS MOSFET specs

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