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IXFV26N50PS Spec and Replacement


   Type Designator: IXFV26N50PS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: PLUS220SMD

 IXFV26N50PS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFV26N50PS Specs

 4.1. Size:323K  ixys
 ixfv26n50p ixfh26n50p.pdf pdf_icon

IXFV26N50PS

IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH) ... See More ⇒

 7.1. Size:197K  ixys
 ixfh26n60p ixft26n60p ixfv26n60p.pdf pdf_icon

IXFV26N50PS

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement Mode IXFV26N60PS trr 200 ns Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin... See More ⇒

 9.1. Size:295K  ixys
 ixfh22n60p ixfv22n60p.pdf pdf_icon

IXFV26N50PS

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 60... See More ⇒

 9.2. Size:326K  ixys
 ixfh20n80p ixft20n80p ixfv20n80p.pdf pdf_icon

IXFV26N50PS

IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P RDS(on) 520 m N-Channel Enhancement Mode IXFV 20N80PS trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG... See More ⇒

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Detailed specifications: IXFV18N90PS , IXFV20N80P , IXFV20N80PS , IXFV22N50P , IXFV22N50PS , IXFV22N60P , IXFV22N60PS , IXFV26N50P , IRFB4227 , IXFV26N60P , IXFV26N60PS , IXFV30N50P , IXFV30N50PS , IXFV30N60P , IXFV30N60PS , IXFV36N50P , IXFV36N50PS .

Keywords - IXFV26N50PS MOSFET specs

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