IXFV30N50PS Datasheet. Specs and Replacement
Type Designator: IXFV30N50PS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 200 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: PLUS220SMD
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IXFV30N50PS substitution
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IXFV30N50PS datasheet
ixfh30n50p ixft30n50p ixfv30n50p.pdf
VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to ... See More ⇒
ixfh30n60p ixfv30n60p ixft30n60p.pdf
IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS ... See More ⇒
ixfh36n50p ixft36n50p ixfv36n50p.pdf
IXFH 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFT 36N50P ID25 = 36 A Power MOSFET IXFV 36N50P RDS(on) 170 m N-Channel Enhancement Mode IXFV 36N50PS trr 200 ms Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS ... See More ⇒
Detailed specifications: IXFV22N50PS, IXFV22N60P, IXFV22N60PS, IXFV26N50P, IXFV26N50PS, IXFV26N60P, IXFV26N60PS, IXFV30N50P, IRFB4115, IXFV30N60P, IXFV30N60PS, IXFV36N50P, IXFV36N50PS, IXFV52N30P, IXFV52N30PS, IXFV74N20P, IXFV74N20PS
Keywords - IXFV30N50PS MOSFET specs
IXFV30N50PS cross reference
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