IXFV52N30P Datasheet. Specs and Replacement

Type Designator: IXFV52N30P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm

Package: PLUS220

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IXFV52N30P datasheet

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Detailed specifications: IXFV26N60P, IXFV26N60PS, IXFV30N50P, IXFV30N50PS, IXFV30N60P, IXFV30N60PS, IXFV36N50P, IXFV36N50PS, IRFP250N, IXFV52N30PS, IXFV74N20P, IXFV74N20PS, IXFV96N15P, IXFV96N15PS, IXFV96N20P, IXFX120N25, IXFX120N25P

Keywords - IXFV52N30P MOSFET specs

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