IXFX120N25 Datasheet. Specs and Replacement

Type Designator: IXFX120N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 568 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: PLUS247

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IXFX120N25 substitution

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IXFX120N25 datasheet

 0.1. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFX120N25

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous... See More ⇒

 5.1. Size:1919K  ixys
 ixfx120n20 ixfk120n20.pdf pdf_icon

IXFX120N25

HiPerFETTM IXFX 120N20 VDSS = 200 V IXFK 120N20 ID25 = 120 A Power MOSFETs RDS(on) = 17 m Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D I... See More ⇒

 6.1. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf pdf_icon

IXFX120N25

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS... See More ⇒

 6.2. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf pdf_icon

IXFX120N25

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK120N30P3 Power MOSFETs ID25 = 120A IXFX120N30P3 RDS(on) 27m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150 ... See More ⇒

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Detailed specifications: IXFV36N50PS, IXFV52N30P, IXFV52N30PS, IXFV74N20P, IXFV74N20PS, IXFV96N15P, IXFV96N15PS, IXFV96N20P, IRF9540N, IXFX120N25P, IXFX120N30T, IXFX140N25T, IXFX140N30P, IXFX160N30T, IXFX170N20P, IXFX170N20T, IXFX180N15P

Keywords - IXFX120N25 MOSFET specs

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