IXFX250N10P Spec and Replacement
Type Designator: IXFX250N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PLUS247
IXFX250N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX250N10P Specs
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www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2... See More ⇒
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Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =... See More ⇒
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Advance Technical Information HiperFETTM VDSS = 1000V IXFK24N100Q3 Power MOSFETs ID25 = 24A IXFX24N100Q3 Q3-Class RDS(on) 440m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1000 V D S VDGR TJ = 25 C to 150 ... See More ⇒
Detailed specifications: IXFX21N100F , IXFX21N100Q , IXFX220N15P , IXFX220N17T2 , IXFX230N20T , IXFX240N15T2 , IXFX24N100F , IXFX24N90Q , STP80NF70 , IXFX25N90 , IXFX26N100P , IXFX26N120P , IXFX26N60Q , IXFX27N80Q , IXFX30N100Q2 , IXFX30N110P , IXFX320N17T2 .
Keywords - IXFX250N10P MOSFET specs
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