All MOSFET. IXFX26N60Q Datasheet

 

IXFX26N60Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFX26N60Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: PLUS247

 IXFX26N60Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX26N60Q Datasheet (PDF)

Datasheet: IXFX230N20T , IXFX240N15T2 , IXFX24N100F , IXFX24N90Q , IXFX250N10P , IXFX25N90 , IXFX26N100P , IXFX26N120P , 4435 , IXFX27N80Q , IXFX30N100Q2 , IXFX30N110P , IXFX320N17T2 , IXFX32N100P , IXFX32N100Q3 , IXFX32N50 , IXFX32N80P .

 

 
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