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IXFX26N60Q Spec and Replacement


   Type Designator: IXFX26N60Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: PLUS247

 IXFX26N60Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX26N60Q Specs

 ..1. Size:104K  ixys
 ixfk26n60q ixfx26n60q.pdf pdf_icon

IXFX26N60Q

IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Conti... See More ⇒

 7.1. Size:251K  ixys
 ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf pdf_icon

IXFX26N60Q

www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2... See More ⇒

 8.1. Size:122K  ixys
 ixfk260n17t ixfx260n17t.pdf pdf_icon

IXFX26N60Q

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =... See More ⇒

 9.1. Size:124K  ixys
 ixfk24n100q3 ixfx24n100q3.pdf pdf_icon

IXFX26N60Q

Advance Technical Information HiperFETTM VDSS = 1000V IXFK24N100Q3 Power MOSFETs ID25 = 24A IXFX24N100Q3 Q3-Class RDS(on) 440m trr 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1000 V D S VDGR TJ = 25 C to 150 ... See More ⇒

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Detailed specifications: IXFX230N20T , IXFX240N15T2 , IXFX24N100F , IXFX24N90Q , IXFX250N10P , IXFX25N90 , IXFX26N100P , IXFX26N120P , BS170 , IXFX27N80Q , IXFX30N100Q2 , IXFX30N110P , IXFX320N17T2 , IXFX32N100P , IXFX32N100Q3 , IXFX32N50 , IXFX32N80P .

Keywords - IXFX26N60Q MOSFET specs

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