IXFX30N100Q2 Spec and Replacement
Type Designator: IXFX30N100Q2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 735 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 300 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: PLUS247
IXFX30N100Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX30N100Q2 Specs
ixfk30n50q ixfx30n50q.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 30N50Q 500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS... See More ⇒
ixfk32n80p ixfx32n80p.pdf
IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin... See More ⇒
ixfk32n50q ixfx32n50q.pdf
VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q 500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M ... See More ⇒
ixfk32n90p ixfx32n90p.pdf
Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P RDS(on) ... See More ⇒
Detailed specifications: IXFX24N100F , IXFX24N90Q , IXFX250N10P , IXFX25N90 , IXFX26N100P , IXFX26N120P , IXFX26N60Q , IXFX27N80Q , IRFP250 , IXFX30N110P , IXFX320N17T2 , IXFX32N100P , IXFX32N100Q3 , IXFX32N50 , IXFX32N80P , IXFX32N80Q3 , IXFX360N10T .
Keywords - IXFX30N100Q2 MOSFET specs
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