IXFX32N50 Datasheet. Specs and Replacement

Type Designator: IXFX32N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: PLUS247

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IXFX32N50 substitution

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IXFX32N50 datasheet

 0.1. Size:573K  ixys
 ixfk32n50q ixfx32n50q.pdf pdf_icon

IXFX32N50

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q 500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M ... See More ⇒

 7.1. Size:161K  ixys
 ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFX32N50

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin... See More ⇒

 7.2. Size:124K  ixys
 ixfk32n90p ixfx32n90p.pdf pdf_icon

IXFX32N50

Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P RDS(on) ... See More ⇒

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Detailed specifications: IXFX26N120P, IXFX26N60Q, IXFX27N80Q, IXFX30N100Q2, IXFX30N110P, IXFX320N17T2, IXFX32N100P, IXFX32N100Q3, RFP50N06, IXFX32N80P, IXFX32N80Q3, IXFX360N10T, IXFX360N15T2, IXFX38N80Q2, IXFX40N90P, IXFX420N10T, IXFX44N50F

Keywords - IXFX32N50 MOSFET specs

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