All MOSFET. IXFX48N60P Datasheet

 

IXFX48N60P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFX48N60P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 830 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Drain Current |Id|: 48 A

Rise Time (tr): 200 nS

Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm

Package: PLUS247

IXFX48N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFX48N60P Datasheet (PDF)

1.1. ixfk48n60p_ixfx48n60p.pdf Size:223K _ixys

IXFX48N60P
IXFX48N60P

IXFK 48N60P VDSS = 600 V PolarHVTM HiPerFET IXFX 48N60P ID2 = 48 A Power MOSFET ? ? RDS(on) ? 135m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V G D (TAB) VGSM Transient 4

3.1. ixfk48n50q_ixfx48n50q_ixfk44n50q_ixfx44n50q.pdf Size:574K _ixys

IXFX48N60P
IXFX48N60P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFK/IXFX 48N50Q 500 V 48 A 100 mΩ Ω Ω Ω Power MOSFETs Ω IXFK/IXFX 44N50Q 500 V 44 A 120 mΩ Ω Ω Ω Q-CLASS ≤ trr ≤ ≤ 250 ns ≤ ≤ Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low trr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25°C to 150

5.1. ixfk40n90p_ixfx40n90p.pdf Size:118K _ixys

IXFX48N60P
IXFX48N60P

Preliminary Technical Information VDSS = 900V IXFK40N90P PolarTM Power MOSFET ID25 = 40A IXFX40N90P HiPerFETTM ? ? RDS(on) ? 210m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 300ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V VGSS Continuous 30 V V

5.2. ixfk420n10t_ixfx420n10t.pdf Size:181K _ixys

IXFX48N60P
IXFX48N60P

Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFK420N10T HiperFETTM ID25 = 420A IXFX420N10T ? ? RDS(on) ? 2.6m? ? ? ? ? ? ? Power MOSFET ? trr ? 140ns ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 100 V TAB D S VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSS

5.3. ixfx44n60_ixfk44n60.pdf Size:104K _ixys

IXFX48N60P
IXFX48N60P

HiPerFETTM IXFX 44N60 VDSS = 600 V IXFK 44N60 ID25 = 44 A Power MOSFETs RDS(on) = 130 mW Single MOSFET Die trr ? 250 ns PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25C44 A TO-264 AA (IXFK) IDM TC = 25C, pulse width limited by TJM 176

5.4. ixfx44n50f_ixfk44n50f.pdf Size:126K _ixys

IXFX48N60P
IXFX48N60P

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F ? ? RDS(on) ? ? ? 120m? ? ? ? ? F-Class: MegaHertz Switching ? trr ? ? 250ns ? ? Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C

Datasheet: IXFX38N80Q2 , IXFX40N90P , IXFX420N10T , IXFX44N50F , IXFX44N50Q , IXFX44N80P , IXFX44N80Q3 , IXFX48N55 , TPC8107 , IXFX48N60Q3 , IXFX520N075T2 , IXFX52N60Q2 , IXFX55N50F , IXFX60N55Q2 , IXFX62N25 , IXFX64N50P , IXFX64N50Q3 .

 


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