IXFX55N50F Datasheet. Specs and Replacement

Type Designator: IXFX55N50F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: PLUS247

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IXFX55N50F datasheet

 5.1. Size:94K  ixys
 ixfx50n50 ixfx55n50.pdf pdf_icon

IXFX55N50F

VDSS ID25 RDS(on) HiPerFETTM IXFX 50N50 500 V 50 A 100 m Power MOSFETs IXFX 55N50 500 V 55 A 80 m trr 250 ns Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V VGSM ... See More ⇒

 5.2. Size:577K  ixys
 ixfk55n50 ixfx55n50 ixfn55n50.pdf pdf_icon

IXFX55N50F

VDSS = 500 V IXFK 55N50 HiPerFETTM ID25 = 55 A IXFX 55N50 Power MOSFET RDS(on) = 90m IXFN 55N50 250 ns trr Single Die MOSFET Symbol Test Conditions Maximum Ratings PLUS247(IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C 500 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) G C ID25 TC = 25 C55 A E IDM TC = 2... See More ⇒

 9.1. Size:178K  ixys
 ixfk520n075t2 ixfx520n075t2.pdf pdf_icon

IXFX55N50F

Advance Technical Information TrenchT2TM GigaMOSTM VDSS = 75V IXFK520N075T2 HiperFETTM ID25 = 520A IXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C75 V Tab D S VDGR TJ = 25 C to 175 C, RGS = 1M 75 V V... See More ⇒

Detailed specifications: IXFX44N50Q, IXFX44N80P, IXFX44N80Q3, IXFX48N55, IXFX48N60P, IXFX48N60Q3, IXFX520N075T2, IXFX52N60Q2, 7N60, IXFX60N55Q2, IXFX62N25, IXFX64N50P, IXFX64N50Q3, IXFX64N60P, IXFX64N60P3, IXFX64N60Q3, IXFX66N50Q2

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