IXFX55N50F MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFX55N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 55 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 195 nC
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: PLUS247
IXFX55N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX55N50F Datasheet (PDF)
ixfx50n50 ixfx55n50.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFX 50N50 500 V 50 A 100 mPower MOSFETsIXFX 55N50 500 V 55 A 80 m trr 250 ns Single Die MOSFETPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 VVGSM
ixfk55n50 ixfx55n50 ixfn55n50.pdf
VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2
ixfk520n075t2 ixfx520n075t2.pdf
Advance Technical InformationTrenchT2TM GigaMOSTMVDSS = 75VIXFK520N075T2HiperFETTMID25 = 520AIXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C75 V TabDSVDGR TJ = 25C to 175C, RGS = 1M 75 VV
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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