IXFX55N50F Spec and Replacement
Type Designator: IXFX55N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 250 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: PLUS247
IXFX55N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX55N50F Specs
ixfx50n50 ixfx55n50.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFX 50N50 500 V 50 A 100 m Power MOSFETs IXFX 55N50 500 V 55 A 80 m trr 250 ns Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V VGSM ... See More ⇒
ixfk55n50 ixfx55n50 ixfn55n50.pdf
VDSS = 500 V IXFK 55N50 HiPerFETTM ID25 = 55 A IXFX 55N50 Power MOSFET RDS(on) = 90m IXFN 55N50 250 ns trr Single Die MOSFET Symbol Test Conditions Maximum Ratings PLUS247(IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C 500 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) G C ID25 TC = 25 C55 A E IDM TC = 2... See More ⇒
ixfk520n075t2 ixfx520n075t2.pdf
Advance Technical Information TrenchT2TM GigaMOSTM VDSS = 75V IXFK520N075T2 HiperFETTM ID25 = 520A IXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C75 V Tab D S VDGR TJ = 25 C to 175 C, RGS = 1M 75 V V... See More ⇒
Detailed specifications: IXFX44N50Q , IXFX44N80P , IXFX44N80Q3 , IXFX48N55 , IXFX48N60P , IXFX48N60Q3 , IXFX520N075T2 , IXFX52N60Q2 , 7N60 , IXFX60N55Q2 , IXFX62N25 , IXFX64N50P , IXFX64N50Q3 , IXFX64N60P , IXFX64N60P3 , IXFX64N60Q3 , IXFX66N50Q2 .
Keywords - IXFX55N50F MOSFET specs
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